A bottom gate thin film transistor and method of fabricating the same are
disclosed, in which a channel region is crystallized by a super grain
silicon (SGS) crystallization method, including: forming a gate electrode
and a gate insulating layer on an insulating substrate; forming an
amorphous silicon layer on the gate insulating layer followed by forming
a capping layer and a metal catalyst layer; performing heat treatment to
crystallize the amorphous silicon layer into a polysilicon layer; and
forming an etch stopper, source and drain regions and source and drain
electrodes. The thin film transistor includes: an insulating substrate; a
gate electrode formed on the substrate; a gate insulating layer formed on
the gate electrode; a polysilicon layer formed on the gate insulating
layer and crystallized by an SGS crystallization method; and source and
drain regions and source and drain electrodes formed in a predetermined
region of the substrate.