A semiconductor memory device includes a bit line sense amplifier for
sensing and amplifying data applied on a bit line; a first driver for
driving a pull-up voltage line of the bit line sense amplifier to a
voltage applied on a normal driving voltage terminal; an overdriving
signal generator for generating an overdriving signal defining an
overdriving period in response to an active command; an overdriving
control signal generator for receiving the overdriving signal to generate
an overdriving control signal for selectively performing an overdriving
operation according to a voltage level of an overdriving voltage; and a
second driver for driving the normal driving voltage terminal to the
overdriving voltage in response to the overdriving control signal.