A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; and an upper mirror formed above the active layer, wherein each of the lower mirror and the upper mirror is composed of a multilayer mirror in which a plurality of unit multilayer films are laminated, each of the unit multilayer films includes a pair of a lower refractive index layer and a higher refractive index layer laminated in a thickness direction, each of the unit multilayer films satisfies a formula (1) below, and the active layer satisfies a formula (2) below, d.sub.D<.lamda./2n.sub.D (1) d.sub.A>m.lamda./2n.sub.A (2) where .lamda. is a design wavelength of the surface-emitting type semiconductor laser, m is a positive integer, d.sub.D is a thickness of the unit multilayer film, n.sub.D is a mean refractive index of the unit multilayer film, d.sub.A is a thickness of the active layer, and n.sub.A is a mean refractive index of the active layer.