The present invention discloses a pattern-distributed mask. It comprises a plurality of mask regions whose images will be merged into a single image (e.g. by interleaving) on an image-carrier (e.g. wafer, mask blank). The pattern spacing on a pattern-distributed mask could be much larger than a conventional mask. For example, all pattern spacing on a pattern-distributed mask could be .about.3F (vs. .about.1F on a conventional mask). It can enable highly-corrected mask, as well as thin-film mask with supporting structures.