A method is provided for writing data to an MRAM device having a plurality
of magnetic memory cells configured in an array between a plurality of
word lines and bit lines. At least one of the magnetic memory cells
includes at least one fixed magnetic layer and a plurality of free
magnetic layers, separated from the fixed magnetic layer by at least one
barrier layer. The free magnetic layers include a first free magnetic
layer adjacent to the barrier layer, a second free magnetic layer
separated from the first free magnetic layer by at least one spacer
layer, and a third free magnetic layer separated from the second free
magnetic layer by at least one anti-parallel coupling layer. A magnetic
moment of the first free magnetic is greater than both a magnetic moment
of the second free magnetic layer and a magnetic moment of the third free
magnetic layer.