An antiferromagnetically exchange-coupled structure for use in a magnetic
device, such as a magnetoresistive sensor, includes an enhancement layer
formed of a chemically-ordered tetragonal-crystalline alloy, a
chemically-ordered tetragonal-crystalline Mn-alloy antiferromagnetic
layer in contact with the enhancement layer, and a ferromagnetic layer
exchange-coupled with the antiferromagnetic layer. The enhancement layer
is an alloy selected from the group consisting of alloys of AuCu, FePt,
FePd, AgTi3, Pt Zn, PdZn, IrV, CoPt and PdCd, and the antiferromagnetic
layer is an alloy of Mn with Pt, Ni, Ir, Pd or Rh. The enhancement layer
enhances the transformation of the Mn alloy from the
chemically-disordered phase to the chemically-ordered phase.