Method and system for controlling voltage and its temperature co-efficient in a non-volatile memory device having a plurality of programmable memory cells is provided. The system includes a temperature-dependent voltage generator for generating an output that is controlled independently by a first multiplier; a temperature-independent voltage generator having a constant output, wherein the constant output is controlled by a second multiplier; and an amplifier that receives the constant output of the temperature-independent voltage generator and the output of temperature-dependent voltage generator to generate a voltage that is applied to a memory cell for a read, and program-verify operation; wherein the temperature co-efficient and voltage applied to memory cells is controlled independently so that intrinsic temperature coefficient of the memory cell is substantially similar to temperature coefficient of the applied voltage.