An LCD and a method of manufacturing the same using at most six mask processes are provided. An active layer and a storage electrode are simultaneously formed by diffraction exposure. Multiple ion implantations are performed using a photoresist or the gate electrode to mask different areas of an underlying semiconductor. Source and drain electrodes and a pixel electrode are simultaneously formed by diffraction exposure. First and second connection electrodes that lower the contact resistance between the drain electrode and the active layer are formed by a lift-off process.

 
Web www.patentalert.com

< Method for producing semi-conducting devices and devices obtained with this method

> Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making

~ 00469