In a manufacturing method of a hybrid integrated circuit device 10 according to the present invention, a first dummy pattern D1 is provided on a first wiring layer 18A. Furthermore, a second dummy pattern D2 is provided on a second wiring layer 18B. The first dummy pattern D1 and the second dummy pattern D2 are connected through a connection part 25 which penetrates an insulation layer 17. Hence, heat dissipation through a dummy pattern can be actively performed. In addition, even in the cases where a multi-layered wiring is formed, it is possible to provide a circuit device which can secure a heat dissipation property.