A method, system and computer program product for resetting a phase change memory cell having a memory cell threshold voltage is disclosed. The method includes reading a resistance of the memory cell. If the resistance is larger than a chosen resistance, the resetting of the memory cell ends. Otherwise, the method proceeds by applying a voltage, larger than the memory cell threshold voltage, to the bit line, and applying a voltage V.sub.WL, larger than the access device threshold voltage, to the word line. The resistance of the memory cell is again read. If the resistance is larger than the chosen resistance, the resetting of the memory cell ends. Otherwise, the method proceeds by applying a voltage, larger than the memory cell threshold voltage, to the bit line, increasing voltage V.sub.WL by a voltage .DELTA.V and applying the increased voltage V.sub.WL to the word line.