The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

 
Web www.patentalert.com

< Method for distinguish failure modes in an APC circuit and an optical transmitter using the same

> Surface emitting semiconductor laser diode and manufacturing method thereof

~ 00472