Shifts in the apparent charge stored on a floating gate (or other charge
storage element) of a non-volatile memory cell can occur because of the
coupling of an electric field based on the charge stored in adjacent
floating gates (or other charge storing elements). To account for this
coupling, the read process for a targeted memory cell will provide
compensation to an adjacent memory cell (or other memory cell) in order
to reduce the coupling effect that the adjacent memory cell has on the
targeted memory cell. The compensation applied is based on a condition of
the adjacent memory cell. To apply the correct compensation, the read
process will at least partially intermix read operations for the adjacent
memory cell with read operations for the targeted memory cell.