The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF.sub.3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.