An exemplary surface acoustic wave device includes a DLC film, a zinc oxide film formed on the DLC film, and at least one interdigital transducer formed on the zinc oxide film. The DLC film has a nano-sized thickness Z(f), corresponding to the surface acoustic wave device having an operational frequency f ranging from 20 to 1,000 GHz, satisfying the condition (1): Z(f)=M.times.Z.sub.0/(f/f.sub.0), and Z(f).gtoreq.1 nanometer. The zinc oxide film has a nano-sized thickness Y(f), corresponding to the surface acoustic wave device having the operational frequency f, satisfying the condition (2): Y(f)=N.times.Y.sub.0/(f/f.sub.0). The Z.sub.0 and Y.sub.0 respectively are the thicknesses of the DLC film and the zinc oxide film corresponding to an operational frequency f.sub.0 of the surface acoustic wave device.

 
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