A wafer processing apparatus is fabricated by depositing a film electrode
onto the surface of a base substrate, the structure is then overcoated
with a protective coating film layer comprising at least one of a
nitride, carbide, carbonitride or oxynitride of elements selected from a
group consisting of B, Al, Si, Ga, refractory hard metals, transition
metals, and combinations thereof. The film electrode has a coefficient of
thermal expansion (CTE) that closely matches the CTE of the underlying
base substrate layer as well as the CTE of the protective coating layer.