A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof, and wherein the compound is present in the range of 1.5 to 4 percent by weight of the aqueous solution. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.