The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH.sub.4OH), hydrogen peroxide (H.sub.2O.sub.2), water (H.sub.2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H.sub.2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.