In the manufacture of a semiconductor device, there are provided a method
that enables reduction in the number of manufacturing steps thereof and a
structure for realizing the method, to thereby realize improvement in
yield and reduction in manufacturing cost. Wirings (source wiring, drain
wiring, and the like), which are respectively formed in a row direction
and a column direction on an element substrate, are formed of the same
conductive film. In this case, one of the respective wirings in the row
direction and the column direction is discontinuously formed at a portion
where the wirings intersect with each other, and an insulating film is
formed on the wirings. Thereafter, a connection wiring for connecting
discontinuous wirings is formed of the same film as that for forming an
electrode provided on the insulating film. As a result, a continuous
wiring is formed.