A nonplanar semiconductor device and its method of fabrication is
described. The nonplanar semiconductor device includes a semiconductor
body having a top surface opposite a bottom surface formed above an
insulating substrate wherein the semiconductor body has a pair laterally
opposite sidewalls. A gate dielectric is formed on the top surface of the
semiconductor body on the laterally opposite sidewalls of the
semiconductor body and on at least a portion of the bottom surface of
semiconductor body. A gate electrode is formed on the gate dielectric, on
the top surface of the semiconductor body and adjacent to the gate
dielectric on the laterally opposite sidewalls of semiconductor body and
beneath the gate dielectric on the bottom surface of the semiconductor
body. A pair source/drain regions are formed in the semiconductor body on
opposite sides of the gate electrode.