A semiconductor device may comprise a plurality of memory cells. A memory
cell may comprise a thyristor, at least a portion of which is formed in a
pillar of semiconductor material. The pillar may comprise sidewalls
defining a cylindrical circumference of a first diameter. In a particular
embodiment, the pillars associated with the plurality of memory cells may
define rows and columns of an array. In a further embodiment, a pillar
may be spaced by a first distance of magnitude up to the first diameter
relative to a neighboring pillar within its row. In an additional further
embodiment, the pillar may be spaced by a second distance of a magnitude
up to twice the first diameter, relative to a neighboring pillar within
its column.