The present invention provides a surface-modified resist pattern which
contains a resist pattern having low etch resistance by itself but having
a modified and etch-resistant surface and is suitable for fine and
high-definition patterning, and a method for efficiently forming the
same. The method forms a surface-modified resist pattern having an
etch-resistant surface by selectively depositing an organic compound on a
resist pattern. The deposition is preferably carried out by using plasma
of a gas. The method preferably includes arranging the organic compound
so as to face the resist pattern, the organic compound having been
deposited on a base material, and depositing the organic compound onto
the resist pattern. The plasma of the gas is preferably introduced from
an opposite side of the base material to the organic compound deposited
thereon.