To reduce a time for applying a target voltage to a gate of a driving transistor. During an initializing period, both ends of a capacitive element become a short-circuited state by turning on transistors, so that node A and B becomes a voltage made by subtracting the threshold voltage V.sub.thp of the driving transistor from a power source voltage V.sub.EL. During a writing period, the transistor is turned on and a data signal X-j is supplied to change the voltage at the node B as much as a voltage corresponding the current which is to flow into an OLED element. The node A is changed from the threshold voltage as much as the value obtained by dividing the voltage change by capacity ratio. During a light-emitting period, the transistor is turned on, so that the current corresponding to the voltage at the node A flows through the OLED element.

 
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