In order to improve light-emission efficiency without degrading protection
performance of a light-emitting layer structure a three p-type layer
structure composed of first to third layers is provided in contact with a
light-emitting layer structure. The first layer is an n-type AlGaN layer
that serves as a protective layer, the third layer is a GaN:Mg layer that
serves as a contact layer and the second layer is an AlGaN:Mg layer
formed between these layers as an intermediate layer. The provision of
the intermediate layer enables an InGaN layer to be thoroughly protected
from heat during growth of layers above even if the n-type AlGaN layer is
made thin, whereby the GaN:Mg layer can be brought near the
light-emitting layer structure to enhance the efficiency of hole
injection into the light-emitting layer structure and thus increase the
light-emission efficiency.