A semiconductor device fabrication method includes the steps of forming a
conductive plug in an insulating layer on a semiconductor substrate so as
to be connected to an element on the substrate; forming a titanium
aluminum nitride (TiAlN) oxygen barrier film over the conductive plug;
forming a titanium (Ti) film over the oxygen barrier film; applying a
thermal process to the titanium film in nitrogen atmosphere to allow the
titanium film to turn into a titanium nitride (TiN) film; and forming a
lower electrode film of a capacitor over the titanium nitride film.