The present invention provides a semiconductor device including a
semiconductor element and a dummy semiconductor element adjacent to the
semiconductor element. When the semiconductor element is a capacitor
element including a bottom electrode, a top electrode and a dielectric
layer between the electrodes, a dummy capacitor element also has dummy
electrodes and a dummy dielectric layer between the dummy electrodes. The
dummy electrode is located so that a space between the top electrode of
the capacitor element ad the dummy top electrode is in a predetermined
range (e.g. 0.3 .mu.m to 14 .mu.m). The dummy capacitor element prevents
the capacitor dielectric layer from degrading since the collisions of the
etching ions with the capacitor dielectric layer in a dry etching process
is suppressed.