By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the oxide film is removed. As a result, a ring-shaped groove is formed in the surface of the GaAs substrate or the AlGaAs substrate. The oxide film can be removed by chemical etching, ultrasonic cleaning with water, a treatment with atomic hydrogen in a vacuum, or the like. Thereafter, a semiconductor film (InAs film or InGaAs film, for example) is epitaxially grown in the groove. Then, a capping layer which covers the semiconductor film and the GaAs substrate or the AlGaAs substrate is formed.