A lithography process for manufacturing bit-island storage mediums that results in improved resolution and uniformity between bit-islands. The lithography process includes applying a resist coating polymer to a surface of a substrate. Selected areas of the resist coating polymer are then exposed to an energy source, wherein each selected area is exposed to the energy source multiple times to provide a time-averaged exposure of the selected areas that reduces errors caused by noise associated with the energy source. After exposure of the resist coating to the energy source, a selective developer solution is applied to the resist coating to develop the fully exposed regions of the resist coating while leaving undeveloped the partially exposed regions of the resist coating. A polymer reflow material is applied to the developed resist pattern and heated to a selected temperature. The polymer reflow material and selected temperature induce reflow of the developed resist coating such that such that a circumferential diameter associated with the holes formed in the resist pattern is reduced to a desired value distance. The process of inducing reflow of the resist coating can be repeated as desired to achieve a resist pattern wherein the holes formed in the resist pattern are reduced to a desired size. The resist pattern formed on the substrate is then transferred to a magnetic medium to form the desired pattern of bit-islands.