A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a cell including a transistor and a magnetic tunneling junction (MTJ) layer connected to the transistor, wherein the MTJ layer includes a lower electrode, a lower magnetic film, a tunneling film having a uniform thickness and a substantially flat upper surface, and an upper magnetic film, wherein the lower electrode includes a first lower electrode and an amorphous second lower electrode. An amorphous flattening film may be further formed between the lower electrode and the lower magnetic film.