A gating voltage control system and method are provided for
electrostatically actuating a micro-electromechanical systems (MEMS)
device, e.g., a MEMS switch. The device may comprise an electrostatically
responsive actuator movable through a gap for actuating the device to a
respective actuating condition corresponding to one of a first actuating
condition (e.g., a closed switching condition) and a second actuating
condition (e.g., an open switching condition). The gating voltage control
system may comprise a drive circuit electrically coupled to a gate
terminal of the device to apply a gating voltage. The gating voltage
control system may further comprise a controller electrically coupled to
the drive circuit to control the gating voltage applied to the gating
terminal in accordance with a gating voltage control sequence. The gating
voltage control sequence may comprise a first interval for ramping up the
gating voltage to a voltage level for producing an electrostatic force
sufficient to accelerate the actuator through a portion of the gap to be
traversed by the actuator to reach a respective actuating condition. The
gating voltage control sequence may further comprise a second interval
for ramping down the gating voltage to a level sufficient to reduce the
electrostatic force acting on the movable actuator. This allows reducing
the amount of force at which the actuator engages a contact for
establishing the first actuating condition, or avoiding an overshoot
position of the actuator while reaching the second actuating condition.