A system is provided for modeling an integrated circuit including at least one insulated-gate field-effect transistor. The system includes generator means for defining a parameter representing mechanical stresses applied to the active area of the transistor, and processing means for determining at least one of the electrical parameters of the transistor based at least partially on the stress parameter. Also provided is a method of modeling an integrated circuit including at least one insulated-gate field-effect transistor, and a method of producing an integrated circuit including at least one insulated-gate field-effect transistor.