A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a
mechanism for changing the magnetic moment direction of a free layer. The
device includes a tunneling barrier layer of MgO and a non-magnetic CPP
layer of Cu or Cr and utilizes a novel free layer comprising a thin layer
of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by
values of DR/R between approximately 95% and 105%.