A semiconductor device and a method of fabricating a semiconductor device
is provided. The semiconductor device can include a semiconductor
substrate; an interlayer dielectric layer having a damascene pattern
formed on the semiconductor substrate; a diffusion barrier formed in the
damascene pattern and made of a trivalent material; a seed layer formed
on the diffusion barrier; and a copper interconnection formed on the seed
layer. In one embodiment, the trivalent material is CoFeB.