To provide surface-emitting type semiconductor lasers that can emit laser light with a high power output and a narrow radiation angle, and methods for manufacturing the same. A surface-emitting type semiconductor laser 200 in accordance with the present invention includes a substrate 101, a first mirror 102 formed above the substrate 101, an active layer 103 formed above the first mirror 102, a second mirror 104 formed above the active layer 103, and a lens section 190 formed above the second mirror 104, wherein the lens section 190 has a function to change a path of light that is emitted from an upper surface 104a of the second mirror 104, at least one of the first mirror 102 and the active layer 103 has a photonic crystal region 122 having a refractive index distribution that is periodic in a plane direction, and the photonic crystal region 122 has a defect region 124 and has a function to confine light in the defect region 124.