An organic semiconductor device includes a substrate, a gate electrode
formed directly on the substrate , gate insulating film formed directly
on the gate electrode, a source electrode and a drain electrode formed
directly on the gate insulating film, an organic semiconductor layer
formed directly on the source electrode and the drain electrode, and a
voltage control layer disposed directly between the gate insulating film
and the organic semiconductor layer and directly contacting the source
electrode and the drain electrode, wherein the voltage control layer
gives an ambipolar characteristic to the organic semiconductor layer.