An insulated gate silicon nanowire transistor amplifier structure is provided and includes a substrate formed of dielectric material. A patterned silicon material may be disposed on the substrate and includes at least first, second and third electrodes uniformly spaced on the substrate by first and second trenches. A first nanowire formed in the first trench operates to electrically couple the first and second electrodes. A second nanowire formed in the second trench operates to electrically couple the second and third electrodes. First drain and first source contacts may be respectively disposed on the first and second electrodes and a first gate contact may be disposed to be capacitively coupled to the first nanowire. Similarly, second drain and second source contacts may be respectively disposed on the second and third electrodes and a second gate contact may be disposed to be capacitively coupled to the second nanowire.