A semiconductor device and a fabrication method thereof are proposed. A
first dielectric layer is formed on a semiconductor substrate having at
least one bond pad, wherein the first dielectric layer has a first
opening for exposing the bond pad and a second opening at a predetermined
position for redistribution. A first metallic layer is applied on the
first dielectric layer and in the first and second openings. A second
metallic layer and a third metallic layer are formed on the first
metallic layer at positions corresponding to the first and second
openings, respectively. A second dielectric layer and a solder bump are
formed on the second and third metallic layers, respectively. The second
metallic layer can assure electrical quality of the first metallic layer
corresponding to the first opening without having an electrical break of
the first metallic layer for redistribution.