In one embodiment, an electrode is disposed on a surface of a first
portion of the dielectric, with the first portion and the electrode
forming an electrode region of the device. A charge-dissipation structure
is then formed by implanting ions into the electrode region and a second
portion of the dielectric located outside of the electrode region. In
another embodiment, a charge-dissipation structure is formed by
implanting ions into the dielectric of a movable part of an
electro-mechanical system. Advantageously, ion implantation can be
performed without masking, lithography, or elevated temperatures; the
electrical properties of the resulting charge dissipation structure can
be controlled relatively easily; and portions of the charge dissipation
structure are protected from oxidation and/or corrosion by the dielectric
material.