A method and system for registering a CAD layout to a Focused Ion Beam
image for through-the substrate probing, without using an optical image
and without requiring biasing, includes an improved method of trench
endpointing during the FIB milling operation with a low beam energy. The
method further includes removal of Ga at the trench floor using
XeF.sub.2, as well as the deposition of an insulating layer onto the
trench floor.