A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided: ##STR00001## wherein X.sub.1 and X.sub.2 are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R.sub.1 and R.sub.2 are independently a linear or branched C.sub.1-10 alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150.degree. C..about.200.degree. C., and a Ti-containing thin layer with a high performance character can be prepared.