An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form B.sub.nH.sub.x+ and B.sub.nH.sub.x-, where 10

 
Web www.patentalert.com

< Phase change materials for applications that require fast switching and high endurance

> Radiographic inspection system for inspecting the contents of a container having dual injector and dual accelerating section

> Integrated capacitor and inductor
~ 00500