A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.