An integrated circuit device having a display memory, wherein a plurality of first power supply interconnects VSSL for supplying a first power supply voltage VSS to memory cells MC are formed in a metal interconnect layer in which a plurality of wordlines WL are formed; and wherein a plurality of second power supply interconnects VDDL for supplying a second power supply voltage VDD to the memory cells are formed in another metal interconnect layer in which a plurality of bitlines BL are formed, the second power supply voltage VDD being higher than the first power supply voltage VSS. A plurality of bitline protection interconnects SHD are formed in a layer above the bitlines BL, and each of the bitline protection interconnects SHD at least partially covers one of the bitlines BL in a plan view. A third power supply interconnect GL for supplying a third power supply voltage to circuits other than the display memory are formed in a layer above the bitline protection interconnects SHD, the third power supply voltage being higher than the second power supply voltage VDD.