A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and Si.sub.3N.sub.4 and/or Si.sub.2N.sub.2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 .mu.m as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 .mu.m, 10 to 30% by mass of a Si powder of 0.05 to 30 .mu.m, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg.