Metrology systems and methods that measure thin film thickness and or
index of refraction of semiconductor wafers with at least one deposited
or grown thin film layer. The present invention measures near normal
incidence and grazing angle of incidence reflection (using reflected
broadband UV, visible, and near infrared electromagnetic radiation) from
a small region on a sample. Embodiments of the system selectively
comprise a near-normal incidence spectrometer/ellipsometer, a high angle
of incidence spectrometer/ellipsometer, or a combination of the two.