A method and apparatus for providing magnetostriction control in a synthetic free layer of a magnetic memory device is disclosed. A first free layer of CoFe alloy has a first thickness. A second free layer of NiFe alloy has a second thickness. At least one of the CoFe alloy and NiFe alloy includes at least one of B, P, Si, Nb, Zr, Hf, Ta and Ti. The relative thicknesses of the first and second free layer are modified to obtain a desired magnetostriction without a change in the magenetoristance ratio, .DELTA.R/R. The synthetic free layer may also be configured to have a net magnetic moment. A sensor may be a current-in-plane or a current-perpendicular-to-the-plane sensor. The sensor also may be configured to be a GMR sensor or a TMR sensor.