A method for forming a shielded gate field effect transistor includes the following steps. Trenches extending into a silicon region are formed using a mask that includes a protective layer. A shield dielectric layer lining sidewalls and bottom of each trench is formed. A shield electrode is formed in a bottom portion of each trench. Protective spacers are formed along upper sidewalls of each trench. An inter-electrode dielectric is formed over the shield electrode. The protective spacers and the protective layer of the mask prevent formation of inter-electrode dielectric along the upper sidewalls of each trench and over mesa surfaces adjacent each trench. A gate electrode is formed in each trench over the inter-electrode dielectric.