A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.