It is an object of the present invention to provide an easy doping method where concentration control is easy, where doping with respect to a large area can be practically conducted and which does not require a special device. The present invention provides a laser doping method where a liquid including a dopant is applied to the surface of a semiconductor that is to be doped and the surface of the semiconductor is irradiated with laser light to add the dopant to the semiconductor. It is also possible to conduct crystallization at the same time.