Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX,
and X metals useful as precursors for the formation of metal containing
powders and for the chemical deposition of the metals on substrates,
particularly for the chemical vapor deposition of metal films suitable
for the manufacture of electronic devices. Methods for their use are also
disclosed. The preferred organometallic compounds of the present
invention are of the formula (R.sup.1).sub.mM(PR.sup.2.sub.3).sub.x,
where M is a metal selected from the group consisting of manganese,
technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium,
osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or
5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each
metals appropriate valence; each R.sup.1 is independently selected from
the group consisting of hydrogen, deuterium, N.sub.2, H.sub.2, D.sub.2
and a variety of substituted alkyl groups; each R.sup.2 is independently
selected from the group consisting of lower alkyl, aryl, arylalkyl, and
alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group
consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl,
oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy,
siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one
group R.sup.1 is selected to be N.sub.2, then m is 2 and the second group
R.sup.1 is hydrogen or deuterium.