A method for implementing alignment of a semiconductor device structure includes forming first and second sets of alignment marks within a lower level of the structure, the second set of alignment marks adjacent the first set of alignment marks. An opaque layer is formed over the lower level, including the first and second sets of alignment marks. A portion of the opaque layer corresponding to the location of said first set of alignment marks is opened so as to render the first set optically visible while the second set of alignment marks initially remains covered by the opaque layer. The opaque layer is patterned using the optically visible first set of alignment marks, wherein the second set of alignment marks remain available for subsequent alignment operations in the event the first set becomes damaged during patterning of the opaque layer.